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Some results from Seki microwave Plasma CVD system

From AX5000/AX5200

The AX5000 / AX5200 incorporate process development for the growth of high quality CVD diamond films for application in electronics, optics, thermal management, and tools. The AX5000 deposits CVD diamond on 2-in diameter substrates with good thickness uniformity substrates up to 4-in diameter can be accommodated.

Diamond membrane approximately 2 micrometer thick (Membrane courtesy of Dr. H.dishmann, BP America, Inc.)

Raman spectrum of a CVD diamond films

SEM of a diamond film

From AX5400/AX5250

The AX5400/AX5250 incorporate process development for the growth of highest quality CVD diamond films at very high growth rates. Uniform, free standing diamond materials for advanced applications are obtained.

Examples of thick CVD Diamond films suitable for heat sink applications
(the larger wafer is 2 in. diameter)

Raman spectrum of a CVD diamond films

SEM of a thick diamond film

High power density microwave plasmas

Diamond deposition at high power densities has yielded more than one-of-magnitude improvement of the linear growth rates previously possible in similar reactors at lower power densities. In this new system, diamond deposition rates of up to 60 mg/hour have been demonstrated. Linear growth rates of 15micrometer/hr near the center of the sample have been measured. Figure 1 shows a cross-section of a diamond film grown at such rates. Note the columnar structure characteristic of high growth rate depositions. Figure 2 shows a top view of the films. Nicely faced material is obtained. At these high rates, thick free-standing films are possible within a few hours of deposition.

Figure 3 shows preferential alignment of the crystals along the [100] direction which is obtained under some deposition conditions. Preferential alignment of the facets can have applications for these CVD films in active electronics.

The thermal conductivity of diamond films samples grown at rates near 3micro meter m/hour was measured using two different techniques. The measurements yielded values of the thermal conductivity in the 10 to 20 W/cm-K range. This high thermal conductivity value makes such films ideal for heat sink applications. As an example, the Raman spectrum for one of these films is shown in Figure 4. The FWHM of the diamond line near 1332cm-1 was measured at 6cm-1. This value is close to the width for natural diamond (approximately 2 cm-1). Such narrow width lines are characteristic of high quality CVD diamond.

Figure 1. SEM cross-section of diamond film
grown at 15micro meter per hour.

Figure 2. Surface of diamond film shown in
Figure 1.

Figure 3. SEM of diamond film grown at 5micro meter per hour, showing preferential [100] alignment.

Figure 4. Raman spectrum of typical
diamond film

From AX6550/AX6560

AX6550/AX6560 are the reactors in a series that incorporates former ASTeX newest development in microwave reactor technology. The AX6550/AX6560 enable the user sufficient production capacity to capture a significant market share in the rapidly expanding thermal management and the highly competitive tool markets.

The figure 1 shows silicon wafer in a 4-inch diameter loading platform. The AX6550/AX6560 is designed to provide clear and easy access to substrates, making loading and unloading a simple operation.This design also allows the straightforward implementation of robotics for loading operations.

The figure 2 shows an example of a loading configuration for SPG422 inserts over a 4 inch diameter loading area.

The AX6500 Series of reactors is designed to satisfy customer needs in all application areas for thin and thick diamond films. Specialized reactors are available or under development for each application area, including thermal management,tool inserts, optics, and electronics.

Figure 1: A 4-inch diameter silicon wafer on the AX 6550 substrate stage.

Figure 2: SPG422 inserts in standard tool figure on AX 6560 substrate stage.

Figure 3: Examples of thick diamond films suitable for thermal management applications, as well as CVD diamond-coated wafers and
tool inserts.

From AX6600

The AX6600 is the latest model designed to meet the scale-up needs of large area coating of diamond
Photograph showing the plasma and a typical batch of tool inserts during processing in the AX6600.

SEM photograph of an insert coated with CVD diamond in the AX6600 reactor the thickness of the coating is approximately is micrometer.

Advanced Materials

Seki microwave plasma CVD systems are now routinely used to deposit aligned carbon nanotubes (Figure 1), nanocrystalline diamond (Figure 2), and silicon carbonitride materials (Figure 3).


Figure 1.		SEM micrograph showing aligned carbon nanotubes grown by microwave plasma assisted CVD (Courtesy of L. C. Chen, National Taiwan University K. H. Chen, Academia Sinica)

Figure 2.		Example of micro and nano-crystalline diamond films grown in AX5000 (Courtesy of T. Soga, Nagoya Institute of Technology)


Figure 3.		Silicon Carbonitride (SixCyNx) crystals and aligned nano rods formed using microwave plasma (Courtesy of L. C. Chen, National Taiwan University K. H.Chen, Academia Sinica)

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